2S DATAARKET
| PartNo | Produsentlinker | Beskrivelse |
|---|---|---|
| 2SC2688L-X-T60-A-K | SILICON TRANSISTOR | |
| 2SC2688M | NEC | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 |
| 2SC2688N | NEC | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 |
| 2SC2690 | Inchange | Silicon Power Transistors |
| 2SC2690A | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2694 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE POWER TRANSISTOR) |
| 2SC2695 | Mitsubishi | EPITAXIAL PLANAR TYPE |
| 2SC2703 | Toshiba | AUDIO POWER AMPLIFIER APPLICATIONS |
| 2SC270306 | Toshiba Semiconductor | Silicon Epitaxial Type Process) |
| 2SC2703O | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1A I(C) | TO-92VAR | |
| 2SC2703Y | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1A I(C) | TO-92VAR | |
| 2SC2703_06 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) |
| 2SC2704 | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126VAR | |
| 2SC2705 | Toshiba Semiconductor | TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
| 2SC270506 | Toshiba Semiconductor | Silicon Epitaxial Type Process) |
| 2SC2705O | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92VAR | |
| 2SC2705Y | TRANSISTOR 150V V(BR)CEO 50MA TO-92VAR | |
| 2SC2705_06 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) |
| 2SC2706 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2707 | Inchange | Silicon Power Transistor |
| 2SC2710 | Toshiba Semiconductor | TRANSISTOR AUDIO AMPLIFIER APPLICATIONS) |
| 2SC2710O | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SPAK | |
| 2SC2710Y | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SPAK | |
| 2SC2712 | Toshiba Semiconductor | TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS) |
| 2SC2712-G-AE3-R | Unisonic Technologies | AUDIO FREQUENCY AMPLIFIER TRANSISTOR |
| 2SC2712-L-AE3-R | Unisonic Technologies | AUDIO FREQUENCY AMPLIFIER TRANSISTOR |
| 2SC2712-O-AE3-R | AUDIO FREQUENCY AMPLIFIER TRANSISTOR | |
| 2SC2712-X-AE3-R | AUDIO FREQUENCY AMPLIFIER TRANSISTOR | |
| 2SC2712-Y-AE3-R | Unisonic Technologies | AUDIO FREQUENCY AMPLIFIER TRANSISTOR |
| 2SC271207 | Toshiba Semiconductor | Silicon Epitaxial Type process) |
| 2SC2712BL | Weitron Technology | |
| 2SC2712GR | Weitron Technology | |
| 2SC2712GT1G | Semiconductor | Medium Frequency Amplifier Transistor |
| 2SC2712L-G-AE3-R | Unisonic Technologies | AUDIO FREQUENCY AMPLIFIER TRANSISTOR |
| 2SC2712L-L-AE3-R | Unisonic Technologies | AUDIO FREQUENCY AMPLIFIER TRANSISTOR |
| 2SC2712L-O-AE3-R | Unisonic Technologies | AUDIO FREQUENCY AMPLIFIER TRANSISTOR |
| 2SC2712L-X-AE3-R | AUDIO FREQUENCY AMPLIFIER TRANSISTOR | |
| 2SC2712L-Y-AE3-R | Unisonic Technologies | AUDIO FREQUENCY AMPLIFIER TRANSISTOR |
| 2SC2712O | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23 | |
| 2SC2712Q | Weitron Technology | |
| 2SC2712Y | Weitron Technology | |
| 2SC2712_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT process) |
| 2SC2713 | Toshiba Semiconductor | TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| 2SC271307 | Toshiba Semiconductor | Silicon Epitaxial Type process) |
| 2SC2713BL | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 | |
| 2SC2713GR | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 | |
| 2SC2713_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT process) |
| 2SC2714 | Toshiba Semiconductor | TRANSISTOR (HIGH FREQUENCY, AMPLIFIER APPLICATIONS |
| 2SC271407 | Toshiba Semiconductor | Silicon Epitaxial Planar Type process) |
| 2SC2714O | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | SC-59 | |
| 2SC2714R | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | SC-59 | |
| 2SC2714Y | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | SC-59 | |
| 2SC2714_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Planar Type (PCT process) |
| 2SC2715 | Toshiba | HIGH FREQUENCY AMPLIFIER APPLICATIONS |
| 2SC271507 | Toshiba Semiconductor | Silicon Epitaxial Planar Type process) |
| 2SC2715M | Jiangsu Changjiang Electronics | TRANSISTOR |
| 2SC2715O | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SC-59 | |
| 2SC2715R | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SC-59 | |
| 2SC2715Y | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SC-59 | |
| 2SC2715_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Planar Type (PCT process) |
| 2SC2716 | Toshiba | HIGH FREQUENCY AMPLIFIER APPLICATIONS HIGH FREQUENCY AMPLIFIER APPLICATIONS |
| 2SC271607 | Toshiba Semiconductor | Silicon Epitaxial Type process) |
| 2SC2716O | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SC-59 | |
| 2SC2716R | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SC-59 | |
| 2SC2716Y | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SC-59 | |
| 2SC2716_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT process) |
| 2SC2717 | Toshiba | FINAL PICTURE AMPLIFIER APPLICATIONS |
| 2SC2718 | TRANSISTOR | BJT | NPN | 200MA I(C) | TO-226VAR | |
| 2SC2719 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92 | |
| 2SC2720 | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-92 | |
| 2SC2721 | HIGH FREQUENCY AMPLIFIER, MEDIUM SPEED SWITCHING | |
| 2SC2721-T | Silicon transistor | |
| 2SC2731 | Hitachi Semiconductor | TUNER FREQUENCY CONVERTER, LOCAL OSCILLATOR WIDE BAND AMPLIFIER |
| 2SC2732 | Hitachi Semiconductor | Silicon Epitaxial |
| 2SC2733 | hitachi | Silicon Epitaxial |
| 2SC2734 | Hitachi Semiconductor | Silicon Epitaxial |
| 2SC2734GTL-E | Renesas | Silicon Epitaxial |
| 2SC2735 | hitachi | Silicon Epitaxial |
| 2SC2735JTL-E | Renesas Technology Corp | Silicon Epitaxial |
| 2SC2736 | hitachi | Silicon Epitaxial |
| 2SC2738 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2739 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2740 | Triple Diffused Junction Mesa | |
| 2SC2749 | Inchange | Silicon Power Transistors |
| 2SC2750 | Inchange | Silicon Power Transistor |
| 2SC2751 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2752 | NEC[NEC] | SILICON POWER TRANSISTOR |
| 2SC2752K | NEC | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 500MA I(C) | TO-126 |
| 2SC2752L | NEC | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 500MA I(C) | TO-126 |
| 2SC2752M | NEC | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 500MA I(C) | TO-126 |
| 2SC2753 | Toshiba | VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS |
| 2SC2754 | TRANSISTOR | BJT | NPN | 100MA I(C) | TO-92 | |
| 2SC2757 | Inchange Semiconductor Company Limited | Silicon Transistor |
| 2SC2761 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2767 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC2768 | ETC[ETC] | MOLD TYPE BIPOLAR TRANSISTORS |
| 2SC2769 | ||
| 2SC2770 | Fuji Semiconductors, Inc. | TRANSISTOR,BJT,NPN,600V V(BR)CEO,60A I(C),MODULE-S |
| 2SC2773 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
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