| PartNo | Produsentlinker | Beskrivelse |
|---|---|---|
| 2SC5108O | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | TO-236VAR | |
| 2SC5108Y | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | TO-236VAR | |
| 2SC5108_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Planar Type For VCO Application |
| 2SC5109 | Toshiba Semiconductor | EPITAXIAL PLANAR TYPE APPLICATION) |
| 2SC5109O | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SC-59 | |
| 2SC5109Y | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SC-59 | |
| 2SC5110 | Toshiba | APPLICATION |
| 2SC511007 | Toshiba Semiconductor | Silicon Epitaxial Planar Type Application |
| 2SC5110O | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SC-70 | |
| 2SC5110Y | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SC-70 | |
| 2SC5110_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Planar Type For VCO Application |
| 2SC5111 | Toshiba | APPLICATION |
| 2SC5111FT | Toshiba | VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS |
| 2SC5111FTO | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SOT-416 | |
| 2SC5111FTY | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SOT-416 | |
| 2SC5111O | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | TO-236VAR | |
| 2SC5111Y | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | TO-236VAR | |
| 2SC5112 | ROHM[Rohm] | TAPED POWER TRANSISTOR PACKAGE WITH AUTOMATIC PLACEMENT MACHINE |
| 2SC5113 | ROHM[Rohm] | TAPED POWER TRANSISTOR PACKAGE WITH AUTOMATIC PLACEMENT MACHINE |
| 2SC5114 | ETC[ETC] | TRANSISTORS |
| 2SC5115 | TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 10A I(C) | TO-263AB | |
| 2SC5116 | ROHM[Rohm] | TAPED POWER TRANSISTOR PACKAGE WITH AUTOMATIC PLACEMENT MACHINE |
| 2SC5117 | ROHM[Rohm] | TAPED POWER TRANSISTOR PACKAGE WITH AUTOMATIC PLACEMENT MACHINE |
| 2SC5118 | ETC[ETC] | TRANSISTORS |
| 2SC5119 | TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 8A I(C) | TO-263AB | |
| 2SC512 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-39 | |
| 2SC5120 | hitachi | Silicon Epitaxial |
| 2SC5121 | Matsshita Panasonic | Power Transistors |
| 2SC5122 | Toshiba | HIGH VOLTAGE SWITCHING APPLICATIONS |
| 2SC512206 | Toshiba Semiconductor | Silicon Triple Diffused Type |
| 2SC5122_06 | Toshiba Semiconductor | Silicon NPN Triple Diffused Type |
| 2SC5124 | Sanken electric | Silicon Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator General Purpose) |
| 2SC5125 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE POWER TRANSISTOR) |
| 2SC5127 | Panasonic Semiconductor | Silicon triple diffusion planar type |
| 2SC5127A | Panasonic Semiconductor | Silicon triple diffusion planar type |
| 2SC5128 | Panasonic Semiconductor | Silicon triple diffusion planar type high breakdown voltage high-speed switching |
| 2SC5129 | Toshiba Semiconductor | TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT HIGH RESOLUTION DISPLAY, COLOR HIGH SPEED SWITCHING APPLICATIONS) |
| 2SC5130 | SANKEN[Sanken electric] | Silicon Triple Diffused Planar Transistor(Switching Regulator General Purpose) |
| 2SC5132A | Hitachi Semiconductor | Character Display Horizontal Deflection Output |
| 2SC5136 | ||
| 2SC5137 | Hitachi Semiconductor | Silicon Epitaxial |
| 2SC5138 | HITACHI[Hitachi Semiconductor] | Silicon Epitaxial |
| 2SC5139 | HITACHI[Hitachi Semiconductor] | Silicon Epitaxial |
| 2SC5140 | hitachi | Silicon Triple Diffused |
| 2SC5141 | hitachi | Silicon Triple Diffused |
| 2SC5142 | Toshiba | HORIZONTAL DEFLECTION OUTPUT HIGH RESOLUTION DISPLAY, COLOR HIGH SPEED SWITCHING APPLICATIONS |
| 2SC5143 | Toshiba | HORIZONTAL DEFLECTION OUTPUT HIGH RESOLUTION DISPLAY, COLOR HIGH SPEED SWITCHING APPLICATIONS |
| 2SC5144 | Toshiba Semiconductor | TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT HIGH RESOULTION DISPLAY, COLOR HIGH SPEED SWITCHING APPLICATIONS) |
| 2SC5145 | Panasonic Semiconductor | Silicon triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 2SC5147 | Rohm | HIGH-VOLTAGE SWITCHING TRANSISTOR (POWER SUPPLY) 120V, |
| 2SC5147C | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-220VAR | |
| 2SC5147D | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-220VAR | |
| 2SC5147E | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-220VAR | |
| 2SC5148 | Toshiba Semiconductor | TRIPLE DIFFUSED MESA TYPE (DISPLAY, COLOR HIGH SPEED SWITCHING APPLICATIONS) |
| 2SC5149 | Toshiba | HORIZONTAL DEFLECTION OUTPUT HIGH RESOLUTION DISPLAY, COLOR HIGH SPEED SWITCHING APPLICATIONS |
| 2SC515 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC5150 | Toshiba Semiconductor | TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT GIHG RESOLUTION DISPLAY, COLOR HIGH SPEED SWITCHING APPLICATIONS) |
| 2SC5154 | Toshiba Semiconductor | EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS |
| 2SC5154O | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-221 | |
| 2SC5154Y | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-221 | |
| 2SC5155 | Sanyo Semicon Device | Low-Frequency General-Purpose Applications |
| 2SC5161 | ROHM | High Voltage Switching Transistor (400V, |
| 2SC5161A | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-263AB | |
| 2SC5161B | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-263AB | |
| 2SC5161TLB | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | SC-63 | |
| 2SC5162 | TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 2A I(C) | TO-252VAR | |
| 2SC5162N | TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 2A I(C) | TO-252VAR | |
| 2SC5162P | TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 2A I(C) | TO-252VAR | |
| 2SC5168 | Isahaya Electronics Corporation | SILICON DUAL TRANSISTOR |
| 2SC5169 | ETC[ETC] | DUAL TRANSISTOR |
| 2SC517 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-37 | |
| 2SC5171 | Toshiba Semiconductor | EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) |
| 2SC517107 | Toshiba Semiconductor | Silicon Epitaxial Type Power Amplifier Applications |
| 2SC5171_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type Power Amplifier Applications |
| 2SC5172 | Toshiba | SWITCHING REGULATOR HIGH VOLTAGE SWITCHING APPLICATIONS |
| 2SC517206 | Toshiba Semiconductor | Silicon Triple Diffused Type process) Switching Regulator High-Voltage Switching Applications |
| 2SC5172_06 | Toshiba Semiconductor | Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High-Voltage Switching Applications |
| 2SC5173 | Toshiba Semiconductor | HIGH VOLTAGE SWITCHING AMPLIFIER APPLICATIONS |
| 2SC5174 | Toshiba Semiconductor | TOSHIBA TRANSISTOR SILICON EPITAXIAL TYPE |
| 2SC5175 | Toshiba | HIGH CURRENT SWITCHING APPLICATIONS |
| 2SC5176 | Toshiba | HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONCERTER APPLICATIONS |
| 2SC5176O | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220VAR | |
| 2SC5176Y | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220VAR | |
| 2SC5177 | EPITAXIAL SILICON TRANSISTOR MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC5177-T1 | NEC | High fT, high gain transistor |
| 2SC5177-T2 | NEC | High fT, high gain transistor |
| 2SC5177T1 | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 10MA I(C) | SOT-23 | |
| 2SC5178 | EPITAXIAL SILICON TRANSISTOR 4-PIN MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC5178-T1 | EPITAXIAL SILICON TRANSISTOR 4-PIN MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC5178-T2 | EPITAXIAL SILICON TRANSISTOR 4-PIN MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION | |
| 2SC5178R | NEC | High fT, high gain transistor |
| 2SC5178R-T1 | NEC | High fT, high gain transistor |
| 2SC5178R-T2 | NEC | High fT, high gain transistor |
| 2SC5178T1 | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 10MA I(C) | SOT-143R | |
| 2SC5179 | NEC[NEC] | EPITAXIAL SILICON TRANSISTOR SMALL MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179-T1 | NEC[NEC] | EPITAXIAL SILICON TRANSISTOR SMALL MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179-T2 | NEC[NEC] | EPITAXIAL SILICON TRANSISTOR SMALL MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179T1 | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SC-70 | |
| 2SC5180 | NEC[NEC] | EPITAXIAL SILICON TRANSISTOR SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION |
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