2S DATAARKET
| PartNo | Produsentlinker | Beskrivelse |
|---|---|---|
| 2SC3390B | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SPAKVAR | |
| 2SC3390C | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SPAKVAR | |
| 2SC3391 | Hitachi Semiconductor | Silicon Epitaxial Planar |
| 2SC3391B | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SPAK | |
| 2SC3391C | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SPAK | |
| 2SC3392 | Sanyo Semicon Device | High-Speed Switching Applications |
| 2SC3392-4 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SOT-23 | |
| 2SC3392-5 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SOT-23 | |
| 2SC3392-6 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SOT-23 | |
| 2SC3392-7 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SOT-23 | |
| 2SC3393 | Sanyo Semicon Device | High-Speed Switching Applications |
| 2SC3393R | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK | |
| 2SC3393S | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK | |
| 2SC3393T | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK | |
| 2SC3393U | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK | |
| 2SC3395 | Sanyo Semicon Device | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SC3396 | SANYO | SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR SWITCHING APPLICATIONS |
| 2SC3397 | SANYO | /NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| 2SC3398 | SANYO | PNP/ EPITAXIAL PLANAR SILICON TRANSISTORS |
| 2SC3399 | Sanyo Semicon Device | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SC3400 | Sanyo Semicon Device | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SC3401 | Sanyo Semicon Device | PNP/ EPITAXIAL PLANAR SILICON TRANSISTORS |
| 2SC3402 | SANYO[Sanyo Semicon Device] | Switching Applications(with Bias Resistance) |
| 2SC3403 | ETC[ETC] | Silicon Triple-Diffused Planar Type |
| 2SC3404 | Mitsubishi | EPITAXIAL PLANAR TYPE |
| 2SC3405 | Toshiba. | TRANSISTOR,BJT,NPN,800V V(BR)CEO,800MA I(C),TO-251AA |
| 2SC340506 | Toshiba Semiconductor | Silicon Triple Diffused Type Switching Regulator High Voltage Switching Applications |
| 2SC3405_06 | Toshiba Semiconductor | Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications |
| 2SC3409 | Inchange Semiconductor Company Limited | Silicon NPN Power Transistors |
| 2SC3412 | Inchange | Silicon Power Transistor |
| 2SC3413 | hitachi | Silicon Epitaxial |
| 2SC3413B | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SPAKVAR | |
| 2SC3413C | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SPAKVAR | |
| 2SC3413D | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SPAKVAR | |
| 2SC3415 | ||
| 2SC3415S | ROHM | Chroma Amplifier Transistor (300V, 0.1A) |
| 2SC3415SM | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | SPAK | |
| 2SC3415SN | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | SPAK | |
| 2SC3415SP | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | SPAK | |
| 2SC3416 | Sanyo | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SC3416C | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 | |
| 2SC3416D | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 | |
| 2SC3416E | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 | |
| 2SC3416F | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 | |
| 2SC3416S | Rohm | Chroma Amplifier Transistor(300V,0.1A) |
| 2SC3417 | Sanyo | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SC3417C | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126 | |
| 2SC3417D | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126 | |
| 2SC3417E | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126 | |
| 2SC3417F | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-126 | |
| 2SC3419 | Toshiba Semiconductor | EPITAXIAL TYPE (MEDIUM POWER AMPLIFIER APPLICATIONS) |
| 2SC3419O | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-126 | |
| 2SC3419Y | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-126 | |
| 2SC3420 | Toshiba Semiconductor | EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) |
| 2SC342006 | Toshiba Semiconductor | Silicon Epitaxial Type Process) Strobe Flash Applications |
| 2SC3420BL | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126 | |
| 2SC3420GR | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126 | |
| 2SC3420Y | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126 | |
| 2SC3420_06 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) Strobe Flash Applications |
| 2SC3421 | Toshiba | AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
| 2SC342106 | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio Frequency Power Amplifier Applications |
| 2SC3421O | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 | |
| 2SC3421Y | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 | |
| 2SC3421_06 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications |
| 2SC3422 | Toshiba Semiconductor | EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER, SPEED SWITCHING) |
| 2SC342206 | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio Frequency Power Amplifier |
| 2SC3422O | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-126 | |
| 2SC3422Y | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-126 | |
| 2SC3422_06 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier |
| 2SC3423 | Toshiba | AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
| 2SC342306 | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio Frequency Amplifier Applications |
| 2SC3423O | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 | |
| 2SC3423Y | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 | |
| 2SC3423_06 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Amplifier Applications |
| 2SC3424 | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 50MA I(C) | TO-126VAR | |
| 2SC3425 | Toshiba | SWITCHING REGULATOR HIGH VOLTAGE SWITCHING APPLICATIONS |
| 2SC342506 | Toshiba Semiconductor | Silicon Triple Diffused Type Process) |
| 2SC3425_06 | Toshiba Semiconductor | Silicon NPN Triple Diffused Type (PCT Process) |
| 2SC3426 | TOSHIBA[Toshiba Semiconductor] | TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR HIGH VOLTAGE SWITCHING HIGH SPEED DC-DC CONVERTER APPLICATIONS) |
| 2SC3429 | TOSHIBA[Toshiba Semiconductor] | EPITAXIAL PLANAR TYPE BAND NOISE AMPLIFIER APPLICATIONS) |
| 2SC3437 | Toshiba Semiconductor | EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS) |
| 2SC343707 | Toshiba Semiconductor | Silicon Epitaxial Type process) Ultra High Speed Switching Applications |
| 2SC3437O | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | SC-59 | |
| 2SC3437R | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | SC-59 | |
| 2SC3437Y | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | SC-59 | |
| 2SC3437_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications |
| 2SC3438 | Isahaya Electronics Corporation | HIGH VOLTAGE DRIVE APPLICATION SILICON EPITAXIAL TYPE |
| 2SC3439 | Isahaya Electronics Corporation | SMALL TYPE MOTOR PLUNGER DRIVE APPLICATION SILCON EPITAXIAL TYPE |
| 2SC3440 | ETC[ETC] | HIGH CURRENT DRIVE APPLICATION SILICON EPITAXIAL TYPE |
| 2SC3441 | ETC[ETC] | SILICON EPTAXIAL TRANSISTOR |
| 2SC3443 | ETC[ETC] | HIGH CURRENT DRIVE APPLICATION SILICON EPITAXIAL TYPE |
| 2SC3444 | ETC[ETC] | FREQUENCY POWER AMPLFY APPLICATION SILICON EPITAXIAL TYPE |
| 2SC3446 | Sanyo Semicon Device | Switching Regulators |
| 2SC3446L | TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 3A I(C) | TO-220AB | |
| 2SC3446M | TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 3A I(C) | TO-220AB | |
| 2SC3446N | TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 3A I(C) | TO-220AB | |
| 2SC3447 | Sanyo | Triple Diffused Planar Silicon Transistor |
| 2SC3447L | TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 5A I(C) | TO-220AB | |
| 2SC3447M | TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 5A I(C) | TO-220AB |
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