BC DATAARKET
| PartNo | Produsentlinker | Beskrivelse |
|---|---|---|
| BCR 523 | Siemens Semiconductor Group | NPN Silicon Digital Transistor(NPN???????????????????? |
| BCR 533 | Siemens Semiconductor Group | NPN Silicon Digital Transistor(NPN???????????????????? |
| BCR 555 | Siemens Semiconductor Group | PNP Silicon Digital Transistor(PNP???????????????????? |
| BCR 562 | Siemens Semiconductor Group | PNP Silicon Digital Transistor(PNP???????????????????? |
| BCR 569 | Siemens Semiconductor Group | PNP Silicon Digital Transistor(PNP???????????????????? |
| BCR 571 | Siemens Semiconductor Group | PNP Silicon Digital Transistor(PNP???????????????????? |
| BCR 573 | Siemens Semiconductor Group | PNP Silicon Digital Transistor(PNP???????????????????? |
| BCR 583 | Siemens Semiconductor Group | PNP Silicon Digital Transistor(PNP???????????????????? |
| BCR08AM | RENESAS[Renesas Technology Corp] | POWER PLANAR PASSIVATION TYPE |
| BCR08AM-12 | Renesas Technology Corp | Triac Power |
| BCR08AM-12A | Renesas Technology Corp | Triac Power |
| BCR08AM-12A-A6 | Renesas Technology Corp | Triac Power |
| BCR08AM-12A-TB | Renesas Technology Corp | Triac Power |
| BCR08AM-14 | Mitsubishi Electric Semiconductor | POWER PLANAR PASSIVATION TYPE |
| BCR08AM-14A | Renesas Technology Corp | Triac Low Power Use |
| BCR08AM-14A-A6 | Renesas Technology Corp | Triac Low Power Use |
| BCR08AM-14A-TB | Renesas Technology Corp | Triac Low Power Use |
| BCR08AM14 | TRIAC|700V V(DRM)|800MA I(T)RMS|TO-92 | |
| BCR08AS | Powerex Power Semiconductors | POWER NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| BCR08AS-12 | RENESAS[Renesas Technology Corp] | Triac Power |
| BCR08AS-12A | Renesas Technology Corp | Triac Power |
| BCR08AS-12A-T14 | Renesas | Triac Power |
| BCR08AS-12A-T24 | RENESAS[Renesas Technology Corp] | Triac Power |
| BCR08AS-8 | Mitsubishi Electric Semiconductor | POWER NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| BCR08AS-8L | Powerex | 400V, 0.8A triac |
| BCR08AS8 | TRIAC|400V V(DRM)|800MA I(T)RMS|SOT-89 | |
| BCR08PN | SIEMENS[Siemens Semiconductor Group] | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
| BCR08PNQ62702C2486 | Siemens Semiconductor Group | TRANSISTOR DIGITAL SOT363 |
| BCR10 | Siemens Semiconductor Group | |
| BCR101 | Infineon Technologies | Silicon Digital Transistor |
| BCR101F | Infineon Technologies | Silicon Digital Transistor |
| BCR101L3 | Infineon Technologies | Silicon Digital Transistor |
| BCR101T | INFINEON[Infineon Technologies | Silicon Digital Transistor |
| BCR103 | Infineon Technologies | Silicon Digital Transistor |
| BCR103F | Infineon Technologies | Silicon Digital Transistor |
| BCR103L3 | Infineon Technologies | Silicon Digital Transistor |
| BCR103T | Infineon Technologies | Silicon Digital Transistor |
| BCR103U | Infineon Technologies | Silicon Digital Transistor |
| BCR108 | Infineon | Silicon Digital Transistor |
| BCR108F | INFINEON[Infineon Technologies | Silicon Digital Transistor |
| BCR108L3 | INFINEON[Infineon Technologies | Silicon Digital Transistor |
| BCR108S | Infineon | Silicon Digital Transistor Array |
| BCR108SQ62702C2414 | Siemens Semiconductor Group | TRANSISTOR DIGITAL SOT363 |
| BCR108T | Infineon Technologies | Silicon Digital Transistor |
| BCR108TE6327 | Infineon Technologies | Silicon Digital Transistor |
| BCR108W | Infineon | Silicon Digital Transistor |
| BCR10CM | Mitsubishi Electric Semiconductor | MEDIUM POWER NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| BCR10CM-12 | Powerex Power Semiconductors | Triac Amperes/400-600 Volts |
| BCR10CM-12L | Powerex Power Semiconductors | Triac Amperes/400-600 Volts |
| BCR10CM-12LA | Renesas Technology Corp | Triac Medium Power Use |
| BCR10CM-12LA-A8 | Renesas | Triac Medium Power |
| BCR10CM-12LB | Renesas Technology Corp | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C) |
| BCR10CM-12LB-A8 | Renesas Technology Corp | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C) |
| BCR10CM-8 | Powerex Power Semiconductors | Triac Amperes/400-600 Volts |
| BCR10CM-8L | Powerex Power Semiconductors | Triac Amperes/400-600 Volts |
| BCR10CM12 | TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB | |
| BCR10CM12L | TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB | |
| BCR10CM12R | TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB | |
| BCR10CM8 | TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB | |
| BCR10CM8L | TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB | |
| BCR10CM8R | TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB | |
| BCR10CS | MITSUBISHI[Mitsubishi Electric Semiconductor] | MEDIUM POWER NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| BCR10CS-12 | TRIAC|600V V(DRM)|10A I(T)RMS|TO-263AB | |
| BCR10CS-12L | Powerex | 600V, 10A triac |
| BCR10CS-12LA | Renesas Technology Corp | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C) |
| BCR10CS-12LA-T11 | Renesas Technology Corp | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C) |
| BCR10CS-12LB | Renesas Technology Corp | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C) |
| BCR10CS-12LB-T11 | Renesas Technology Corp | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C) |
| BCR10CS-8L | Powerex | 400V, 10A triac |
| BCR10CS12L | TRIAC|600V V(DRM)|10A I(T)RMS|TO-263AB | |
| BCR10CS12R | TRIAC|600V V(DRM)|10A I(T)RMS|TO-263AB | |
| BCR10CS8 | TRIAC|400V V(DRM)|10A I(T)RMS|TO-263AB | |
| BCR10CS8L | TRIAC|400V V(DRM)|10A I(T)RMS|TO-263AB | |
| BCR10CS8R | TRIAC|400V V(DRM)|10A I(T)RMS|TO-263AB | |
| BCR10KM-12LA | Renesas Technology Corp | Triac Medium Power Use |
| BCR10KM-12LA-A8 | Renesas | Triac Medium Power |
| BCR10KM-12LB | Renesas Technology Corp | Triac Medium Power Use |
| BCR10KM-12LB-A8 | Renesas Technology Corp | Triac Medium Power Use |
| BCR10KM-12LC | Renesas Technology Corp | Triac Medium Power |
| BCR10KM-12LC-A8 | Renesas Technology Corp | Triac Medium Power |
| BCR10PM | POWEREX[Powerex Power Semiconductors] | Isolated Triac Amperes/400-600 Volts |
| BCR10PM-12 | POWEREX[Powerex Power Semiconductors] | Isolated Triac Amperes/400-600 Volts |
| BCR10PM-12L | POWEREX[Powerex Power Semiconductors] | Isolated Triac Amperes/400-600 Volts |
| BCR10PM-12LD | Renesas Technology Corp | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C) |
| BCR10PM-12LD-A8 | Renesas Technology Corp | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C) |
| BCR10PM-12LG | RENESAS[Renesas Technology Corp] | Triac Medium Power |
| BCR10PM-12LG-A8 | RENESAS[Renesas Technology Corp] | Triac Medium Power |
| BCR10PM-12LG_07 | Renesas Technology Corp | Triac Medium Power Use |
| BCR10PM-8 | POWEREX[Powerex Power Semiconductors] | Isolated Triac Amperes/400-600 Volts |
| BCR10PM-8L | POWEREX[Powerex Power Semiconductors] | Isolated Triac Amperes/400-600 Volts |
| BCR10PM12L | TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB | |
| BCR10PM12R | TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB | |
| BCR10PM8 | TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB | |
| BCR10PM8L | TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB | |
| BCR10PM8R | TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB | |
| BCR10PN | Siemens Semiconductor Group | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
| BCR10PNQ62702C2411 | TRANSISTOR DIGITAL SOT363 | |
| BCR10UM | MITSUBISHI[Mitsubishi Electric Semiconductor] | MEDIUM POWER INSULATED TYPE, GLASS PASSIVATION TYPE |
| BCR10UM12 | TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB |
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